摘要 |
PROBLEM TO BE SOLVED: To provide a method and an apparatus for forming an insulating film which has a high quality and which can form a film having a high void ratio. SOLUTION: 1,3,5-trimethyl-1,3,5-trivinylcyclotrisiloxane (V3D3) and allylpentafluorobenzene (APFB) are supplied into a chamber 12, excited by a plasma, and molecular active species of these compounds are generated. These active species are reflected near the surface of a substrate, and an insulating film having a siloxane structure having a predetermined thickness is formed. Further, the APFB molecule, etc. (containing a fragment molecule) containing in the insulating film is selectively desorbed, and the insulating film having relatively large pores is formed on the surface of a wafer W while a siloxane skeleton structure is maintained. COPYRIGHT: (C)2004,JPO
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