发明名称 METHOD FOR PREPARING THIN GOLD FILM FLAT AT ATOMIC LEVEL
摘要 PROBLEM TO BE SOLVED: To provide a method for preparing a thin gold film flat at the atomic level on a mica substrate by a vacuum deposition method with a simple operation. SOLUTION: The problem is solved by investigating the pretreatment method for a mica substrate and the conditions such as degree of vacuum, vapor deposition temperature, vapor deposition rate, and film thickness in the vacuum deposition method. The thin gold film is formed by the following operations: an 8 mm×12 mm mica substrate with its surface cleaved in the air is heat treated in a vacuum of 1-8×10<SP>-6</SP>Torr at 550°C for 2 hr and then kept at 473°C in a vacuum of 1-3×10<SP>-6</SP>Torr; and a thin gold film with a thickness of 150 nm is vapor deposited at a vapor deposition rate of 2.0 nm/s and then cooled in a vacuum of 1-3×10<SP>-6</SP>Torr to lower than 100°C. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004149818(A) 申请公布日期 2004.05.27
申请号 JP20020313636 申请日期 2002.10.29
申请人 HIGO MORIHIDE 发明人 HIGO MORIHIDE
分类号 C23C14/14;C23C14/24;G01Q30/08;G01Q30/20;G02B5/08;(IPC1-7):C23C14/14;G01N13/10 主分类号 C23C14/14
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