发明名称 ODT CIRCUIT AND ODT METHOD CAPABLE OF MINIMIZING ON CHIP DC CURRENT CONSUMPTION AND MEMORY SYSTEM ADOPTING MEMORY DEVICE COMPRISING THE SAME
摘要 PURPOSE: An ODT(On-Die Termination) circuit and an ODT method are provided to minimize on-chip DC current consumption. CONSTITUTION: The ODT(On-Die Termination) circuit of a synchronous memory device(300) comprises a termination voltage port(VTP) receiving a termination voltage, and a data input/output port, and the first termination resistor(R-term1) whose one end is connected to the data input/output port, and a switch(TM) connecting the termination voltage port and another end of the first termination resistor selectively in response to a termination enable signal.
申请公布号 KR20040043995(A) 申请公布日期 2004.05.27
申请号 KR20020072478 申请日期 2002.11.20
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, JEONG BAE
分类号 G11C11/409;G11C7/10;G11C11/40;(IPC1-7):G11C11/40 主分类号 G11C11/409
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