发明名称 |
ODT CIRCUIT AND ODT METHOD CAPABLE OF MINIMIZING ON CHIP DC CURRENT CONSUMPTION AND MEMORY SYSTEM ADOPTING MEMORY DEVICE COMPRISING THE SAME |
摘要 |
PURPOSE: An ODT(On-Die Termination) circuit and an ODT method are provided to minimize on-chip DC current consumption. CONSTITUTION: The ODT(On-Die Termination) circuit of a synchronous memory device(300) comprises a termination voltage port(VTP) receiving a termination voltage, and a data input/output port, and the first termination resistor(R-term1) whose one end is connected to the data input/output port, and a switch(TM) connecting the termination voltage port and another end of the first termination resistor selectively in response to a termination enable signal.
|
申请公布号 |
KR20040043995(A) |
申请公布日期 |
2004.05.27 |
申请号 |
KR20020072478 |
申请日期 |
2002.11.20 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, JEONG BAE |
分类号 |
G11C11/409;G11C7/10;G11C11/40;(IPC1-7):G11C11/40 |
主分类号 |
G11C11/409 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|