| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pattern forming method which can form dense patterns without receiving the influence of standing waves and can form the patterns having a high aspect ratio in a dry etching step by combining lower layer films usable as thin films having excellent dry etching resistance and a resist film containing a fluorine-containing polymer having high transparency at a wavelength ≤193 nm and multilayered films for forming the patterns. <P>SOLUTION: The pattern forming method has a step of successively forming (1) the first lower layer film containing a polymer of a carbon content ≥80wt%, (2) the second lower layer film containing a siloxane component, and (3) the resist film containing a polymer of a carbon content ≥30wt% which is made easily soluble in an alkali by the effect of an acid, and a radiation sensitive acid generating agent, exposing the resist film with radiation, and developing the exposed resist film. The multilayered films for pattern formation has the first lower layer film, the second lower layer film and the resist film. <P>COPYRIGHT: (C)2004,JPO |
