SUBSTRATE FOR ELECTRONIC DEVICE, METHOD OF MANUFACTURING SAME, AND ELECTRONIC DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a substrate for an electronic device and a method of manufacturing the same which eliminate the need of processing for forming the reconstitution surface or the hydrogen terminal surface, and a buffer layer formed on the substrate is formed by epitaxial growth in (100) orientation.

SOLUTION: An electronic device 100 is composed of a substrate 11 formed of silicon, a first buffer layer 12 and a second buffer layer 13 laminated by being epitaxially grown in order on a film forming surface of the substrate 11 and having a fluorite structure, a first oxide electrode layer 14 having a laminar perovskite structure, and a second oxide electrode layer 15 having a simple perovskite structure. The first buffer layer 12 is epitaxially grown with a growth rate higher than the SiO2growth rate by irradiating the naturally oxide film coating Si with the metal plasma in the SiO sublimation region.

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