| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a white light emitting device which emits natural white light with enhanced luminous efficiency, and also to provide its manufacturing method. <P>SOLUTION: This white light-emitting device consists of: a metal reflecting layer; a substrate formed on the metal reflecting layer; a buffer layer formed on the substrate; a second multi-quantum well active layer formed on the buffer layer; an n-GaN-based layer formed on the second multi-quantum well active layer; a first multi-quantum well active layer formed on the n-GaN-based layer; and a p-type distribution Bragg reflection layer, formed on the first multi-quantum well active layer. In addition, the white light-emitting device is equipped with: a resonance cavity, to provide the reflection characteristics to the p-type distribution Bragg reflection layer; a contact layer with a p-GaN-based layer formed on the p-type distribution Bragg reflection layer; an n-type metal electrode positioned in the exposure region of the n-GaN-based layer; and a p-type metal electrode positioned in the contact layer. <P>COPYRIGHT: (C)2004,JPO |
