| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method by which a low-resistance p-type boron phosphide layer (p-type boron phosphide semiconductor layer) can be formed stably on a crystalline substrate or a crystalline layer by a vapor phase growth method. <P>SOLUTION: In this method, the p-type boron phosphide semiconductor layer is formed on the crystalline substrate 101 or the crystalline layer. Firstly, the crystalline substrate 101 or the layer is disposed in a vapor phase growth area, and an amorphous layer 102 containing boron and phosphorus is formed on the substrate 101 or the layer by adjusting the ratio of the concentration of a boron material supplied to the vapor phase growth area to the concentration of a phosphorus material also supplied to the area to not less than 2 to not more than 50, while the substrate 101 or the layer is heated and maintained at a temperature of 250-1,000°C. Then the amorphous layer 102 is heat-treated in an atmosphere constituted by making a compound material containing phosphorus to flow at a temperature of >1,000°C and ≤1,200°C. Thereafter, the p-type boron phosphide semiconductor layer 103 is formed on the heat-treated amorphous layer 102 at a temperature of 750-1,200°C by adjusting the ratio to a second ratio higher than the first ratio. <P>COPYRIGHT: (C)2004,JPO |
