发明名称 METHOD FOR IRRADIATING LASER BEAM AND PROCESS FOR FABRICATING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method for irradiating a laser beam with high production efficiency using a CW laser, and to provide a laser irradiator for use therein. SOLUTION: Assuming the length of one side of a rectangular substrate deposited with a semiconductor film is b, the scanning speed is V, and the acceleration required for increasing the relative speed of the substrate to a laser beam up to the scanning speed V is g, following relation is satisfied, V=(gb/5.477)<SP>1/2</SP>. A method for irradiating a laser beam in which the time required for laser annealing is minimized is thereby provided. Although the acceleration g is assumed constant, a time averaged value is employed if the acceleration varies. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004153022(A) 申请公布日期 2004.05.27
申请号 JP20020316751 申请日期 2002.10.30
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI;TANAKA KOICHIRO
分类号 G02F1/1368;H01L21/20;H01L21/268;H01L21/336;H01L29/786;(IPC1-7):H01L21/268;G02F1/136 主分类号 G02F1/1368
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