发明名称 TEMPERATURE DETECTION CIRCUIT FOR SUBSTRATE, RECORDING HEAD ELEMENT SUBSTRATE, AND RECORDER
摘要 PROBLEM TO BE SOLVED: To reduce influence caused by dispersion in products, and to increase a variation (sensitivity) of a voltage with respect to a temperature, even in production by a CMOS semiconductor production process. SOLUTION: This temperature detecting circuit is provided, on a substrate, with a plurality of transistors 101, 102 with respective commutators connected in series, using the substrate as a collector, and using bases of the respective transistors and emitters thereof as the commutators, constant current sources 103, 104 for supplying constant currents to the respective emitters of the respective transistors, and output terminals 105, 106 for outputting voltages between those of the emitter in the initial stage transistor 101 and the base of the final stage transistor 102, in order to detect the temperature of the substrate manufactured by a semiconductor production process. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004150897(A) 申请公布日期 2004.05.27
申请号 JP20020314925 申请日期 2002.10.29
申请人 CANON INC 发明人 HIRAYAMA NOBUYUKI
分类号 B41J2/05;B41J2/16;G01K7/01;H01L21/822;H01L21/8222;H01L21/8248;H01L21/8249;H01L27/04;H01L27/06;H01L27/082;(IPC1-7):G01K7/01;H01L21/824 主分类号 B41J2/05
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