发明名称 CAPACITIVE ELEMENT, SEMICONDUCTOR STORAGE DEVICE, AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To enable the lower electrode of a capacitive element to maintain an oxygen barrier property and, in addition, to prevent the capacitor insulating film of the capacitive element composed of a metal oxide from being reduced. SOLUTION: In the capacitive element, the side face of the lower electrode 31 is composed of aluminum oxide having a film thickness of about 5-100 nm, and covered with a first insulating barrier layer 15 which prevents diffusion of oxygen and hydrogen. The top face of an upper electrode 33 and the side faces of the upper electrode 33, a capacitor insulating film 32, and an embedded insulating film 16 are also composed of aluminum oxide having film thicknesses of about 5-100 nm, and covered with second insulating barrier layers 17 which prevent diffusion of hydrogen. The layers 17 are brought into contact with the first barrier layer 15 in the lateral area of the lower electrode 31. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004153293(A) 申请公布日期 2004.05.27
申请号 JP20030416365 申请日期 2003.12.15
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 NAGANO YOSHIHISA;FUJII EIJI
分类号 H01L21/768;H01L21/822;H01L21/8246;H01L27/04;H01L27/105;(IPC1-7):H01L27/105 主分类号 H01L21/768
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