| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which can easily separate an element with a fine pattern without occurrence of a step between an element region and an element separation layer, which seriously affects a post-process of a photolithography processing and the like. SOLUTION: Oxygen ions are impurity-implanted to a region where the element separation layer is scheduled to be formed in an SOI film 106 (silicon layer) on a silicon substrate 102. Oxidation speed is selectively promoted and the element separation layer is formed. COPYRIGHT: (C)2004,JPO
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