| 摘要 |
PROBLEM TO BE SOLVED: To solve a matter of substrate damage when an insulating film is formed, a matter of stress to a substrate, and a matter of difficulty of forming an insulating film except nitride silicon in a cat-CVD process. SOLUTION: In a semiconductor device wherein a semiconductor element is formed on a III-V compound semiconductor substrate, an insulating film is installed whose main component is nitrogen and phosphorus, as an insulating film formed on the semiconductor substrate. In a manufacturing method of a semiconductor device which has a semiconductor element formed on a III-V compound semiconductor substrate, an insulating film whose main component is nitrogen and phosphorus is formed as an insulating film of the semiconductor element by applying gas containing nitrogen and gas containing phosphorus to material by using gas phase reaction. By using a completely new insulating film called this phosphorus nitride film, an insulating film can be formed which has low tension/low interface state density as compared with the conventional insulating film, and high reliability process suitable for compound semiconductor can be constituted. COPYRIGHT: (C)2004,JPO
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