发明名称 |
Method for forming ultra low k films using electron beam |
摘要 |
The present invention generally provides a method for depositing a low dielectric constant film using an e-beam treatment. In one aspect, the method includes delivering a gas mixture comprising one or more organosilicon compounds and one or more hydrocarbon compounds having at least one cyclic group to a substrate surface at deposition conditions sufficient to deposit a non-cured film comprising the at least one cyclic group on the substrate surface. The method further includes substantially removing the at least one cyclic group from the non-cured film using an electron beam at curing conditions sufficient to provide a dielectric constant less than 2.5 and a hardness greater than 0.5 GPa.
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申请公布号 |
US2004101633(A1) |
申请公布日期 |
2004.05.27 |
申请号 |
US20020302393 |
申请日期 |
2002.11.22 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
ZHENG YI;NEMANI SRINIVAS D.;XIA LI-QUN;HOLLAR ERIC;YIM KANG SUB |
分类号 |
B05D3/06;B05D7/24;C23C16/40;C23C16/56;H01L21/3105;H01L21/312;(IPC1-7):C23C16/00;B05D3/00 |
主分类号 |
B05D3/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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