| 发明名称 |
Process for fabricating a semiconductor device having an insulating layer formed over a semiconductor substrate |
| 摘要 |
The present invention provides a method for manufacturing a semiconductor device comprising an insulating layer that includes a seed layer formed on a silicon substrate. The seed layer is formed by exposing a hydrogen-terminated surface of the silicon substrate in a substantially oxygen-free environment to a seed layer precursor comprising a methylated metal. Forming the insulating layer further includes depositing a dielectric material on the seed layer.
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| 申请公布号 |
US2004099889(A1) |
申请公布日期 |
2004.05.27 |
| 申请号 |
US20020306565 |
申请日期 |
2002.11.27 |
| 申请人 |
AGERE SYSTEMS, INC. |
发明人 |
FRANK MARTIN MICHAEL;CHABAL YVES;WILK GLEN DAVID;GREEN MARTIN L. |
| 分类号 |
H01L21/28;H01L21/316;H01L21/768;H01L21/8234;H01L21/8238;H01L29/51;(IPC1-7):H01L21/336;H01L29/94;H01L31/113;H01L21/31;H01L21/320 |
主分类号 |
H01L21/28 |
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