| 摘要 |
A MOS transistor (29) having utility as a charge storage device, as in a nonvolatile memory device, or as an amplifier, using the charge storage feature of the device as a way to modulate the conductivity of a channel between source and drain electrodes (31, 33). Over a doped substrate (11), a gate oxide layer (17) isolates a doped, electrically isolated, charge reservoir layer (19) from the substrate. An overlying tunnel barrier layer (21) isolates the charge reservoir layer from a nanocrystal layer (23) capable of receiving or dispensing electric charge to the charge reservoir layer under the influence of a control gate (27) overlying the nanocrystal layer and separated by an oxide layer (25). Electric charge on the charge reservoir layer influences the conductivity of the channel. The device may be operated in a memory mode, like an EEPROM, or in an amplifier mode where changes in the gate voltage are reflected in conductivity changes of the channel. |
