| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to restrain the TED(Transient Enhanced Diffusion) phenomenon of impurities and prevent the deterioration of an upper layer by forming an ion implantation layer using predetermined atomic dopants. CONSTITUTION: Predetermined processes are carried out on a semiconductor substrate(101). A screen oxide layer(102) is formed on the resultant structure. An ion implantation layer(105) is formed by implanting predetermined impurities into the resultant structure. Preferably, the ion implantation process is carried out by implanting the predetermined impurity of 5E11-1E13 ion/cm2 using the energy of 10-50 KeV. Preferably the predetermined impurity is indium.
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