Semiconductor device and method for fabricating the same

摘要

An inventive semiconductor device includes: an interlevel dielectric film 204 provided on a semiconductor substrate 101; and interconnects 208a and 208c buried in the interlevel dielectric film 204 and electrically connected to the semiconductor substrate 101. An MIM capacitor 201 includes: first and second electrodes 208b and 214b each made of a metal; and a capacitive insulating film 210 of a dielectric. The first electrode 208b is buried in the interlevel dielectric film 204. The capacitive insulating film 210 is provided on the first electrode 208b. The second electrode 214b is a metal layer provided to face the first electrode 208b with the capacitive insulating film 210 interposed therebetween.