发明名称 |
Semiconductor device, method of generating pattern for semiconductor device, method of manufacturing semiconductor device and device for generating pattern used for semiconductor device |
摘要 |
To provide a semiconductor device characterized in that: a decoupling capacitor can be increased; noise generated from an electric power supply can be effectively absorbed; and a stable operation of a circuit can be realized. Irrespective of whether or not a region is close to a power supply wiring or a ground wiring, MOS is spread all over a spare area of a chip and connected to a power supply wiring and ground wiring by utilizing a wiring layer and diffusion layer.
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申请公布号 |
US2004102034(A1) |
申请公布日期 |
2004.05.27 |
申请号 |
US20030634989 |
申请日期 |
2003.08.06 |
申请人 |
ITO MITSUMI;SHIMADA JUNICHI;MUKAI KIYOHITO;TSUJIKAWA HIROYUKI |
发明人 |
ITO MITSUMI;SHIMADA JUNICHI;MUKAI KIYOHITO;TSUJIKAWA HIROYUKI |
分类号 |
G06F17/50;H01L21/00;H01L21/4763;H01L21/82;H01L21/822;H01L23/58;H01L27/02;H01L27/04;(IPC1-7):H01L21/476 |
主分类号 |
G06F17/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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