发明名称 Semiconductor device, method of generating pattern for semiconductor device, method of manufacturing semiconductor device and device for generating pattern used for semiconductor device
摘要 To provide a semiconductor device characterized in that: a decoupling capacitor can be increased; noise generated from an electric power supply can be effectively absorbed; and a stable operation of a circuit can be realized. Irrespective of whether or not a region is close to a power supply wiring or a ground wiring, MOS is spread all over a spare area of a chip and connected to a power supply wiring and ground wiring by utilizing a wiring layer and diffusion layer.
申请公布号 US2004102034(A1) 申请公布日期 2004.05.27
申请号 US20030634989 申请日期 2003.08.06
申请人 ITO MITSUMI;SHIMADA JUNICHI;MUKAI KIYOHITO;TSUJIKAWA HIROYUKI 发明人 ITO MITSUMI;SHIMADA JUNICHI;MUKAI KIYOHITO;TSUJIKAWA HIROYUKI
分类号 G06F17/50;H01L21/00;H01L21/4763;H01L21/82;H01L21/822;H01L23/58;H01L27/02;H01L27/04;(IPC1-7):H01L21/476 主分类号 G06F17/50
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