发明名称 |
Use of chromeless phase shift masks to pattern contacts |
摘要 |
Method for using chromeless phase shift lithography (CPL) masks to pattern contacts corresponding CPL masks. The method for patterning contacts includes illuminating a CPL mask comprising a reticle having plurality of phase-shifting features interspersed with non-phase-shifting areas with a short wavelength light source, wherein the phase-shifting features are configured in a pattern corresponding to a target pattern of the contacts on the semiconductor substrate. Phase-shifted and non-phase-shifted light passing through the reticle is the projected as an aerial image onto a layer of a negative tone resist applied over the semiconductor substrate to pattern the contacts in the resist. The phase-shifting features may comprise recesses or mesas, and cause light passing therethrough to be phase-shifted in phase approximately 180° from light passing through non-phase-shifting areas of the mask.
|
申请公布号 |
US2004101764(A1) |
申请公布日期 |
2004.05.27 |
申请号 |
US20020304303 |
申请日期 |
2002.11.25 |
申请人 |
NYHUS PAUL;SILVAKUMAR SAM |
发明人 |
NYHUS PAUL;SILVAKUMAR SAM |
分类号 |
G03F1/00;(IPC1-7):G03F9/00;G03C5/00 |
主分类号 |
G03F1/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|