| 摘要 |
According to the present invention, in a method for manufacturing a semiconductor device, an underlayer film is formed on a substrate. A resist pattern is formed on the underlayer film. A spin-on glass film is formed on the underlayer film and the resist pattern so as to cover the resist pattern. The resist pattern is removed to produce a reversal pattern in the spin-on glass film. The underlayer film is etched by using the spin-on glass film as a mask to form a fine pattern.
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