Fine pattern forming method

摘要

There is provided a method of forming a fine resist pattern in which a highly practicable photo-sensitive composition obtained from a material having a high transparency against an exposure light having a short wavelength such as F2 excimer laser beam is used as a resist, and the method of forming a fine resist pattern comprises a step for forming a photo-sensitive layer on a substrate or on a given layer on a substrate using a photo-sensitive composition comprising at least a compound generating an acid by irradiation of light and a compound having fluorine atom in its molecular structure, a step for exposing by selectively irradiating a given area of said photo-sensitive layer with energy ray, a step for heat-treating the exposed photo-sensitive layer, and a step for forming a fine pattern by developing the heat-treated photo-sensitive layer to selectively remove the exposed portion or un-exposed portion of the photo-sensitive layer.