发明名称 |
Semiconductor device |
摘要 |
Gates of pMISFETs which need high current driving capability are high-driving-capability gates placed in discontinuous active regions or high-driving-capability gates disposed in two-input active regions. Gate of pMISFETs which do not need high current driving capability are normal gates arranged in continuous active regions. Since the high-driving-capability gates are provided in the discontinuous active regions or the two-input active regions, pMISFETs with high driving capability is achieved by utilizing light holes created due to a lattice distortion.
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申请公布号 |
US2004099924(A1) |
申请公布日期 |
2004.05.27 |
申请号 |
US20030656199 |
申请日期 |
2003.09.08 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
NAKATA KAZUHISA;OOTANI KATSUHIRO;SAHARA YASUYUKI;SEKIDO SHINSAKU |
分类号 |
H01L27/08;H01L21/82;H01L21/8234;H01L21/8238;H01L27/02;H01L27/088;(IPC1-7):H01L29/00 |
主分类号 |
H01L27/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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