发明名称 |
SEMICONDUCTOR CAPACITOR AND MOSFET FITTED THEREWITH |
摘要 |
The inventive semiconductive capacitor comprises a first capacitor electrode (1), a second capacitor electrode (3) and a capacitor dielectric (5) which is arranged between the two capacitor electrodes, comprising praseodymium oxide. The invention is characterized in that the second capacitor electrode (3) comprises praseodymium sillicide. |
申请公布号 |
WO2004006315(A3) |
申请公布日期 |
2004.05.27 |
申请号 |
WO2003EP07179 |
申请日期 |
2003.07.04 |
申请人 |
IHP GMBH - INNOVATIONS FOR HIGH PERFORMANCE MICROE;MUESSIG, HANS-JOACHIM |
发明人 |
MUESSIG, HANS-JOACHIM |
分类号 |
H01L21/02;H01L21/28;H01L21/316;H01L29/51;H01L29/94 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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