发明名称 SEMICONDUCTOR CAPACITOR AND MOSFET FITTED THEREWITH
摘要 The inventive semiconductive capacitor comprises a first capacitor electrode (1), a second capacitor electrode (3) and a capacitor dielectric (5) which is arranged between the two capacitor electrodes, comprising praseodymium oxide. The invention is characterized in that the second capacitor electrode (3) comprises praseodymium sillicide.
申请公布号 WO2004006315(A3) 申请公布日期 2004.05.27
申请号 WO2003EP07179 申请日期 2003.07.04
申请人 IHP GMBH - INNOVATIONS FOR HIGH PERFORMANCE MICROE;MUESSIG, HANS-JOACHIM 发明人 MUESSIG, HANS-JOACHIM
分类号 H01L21/02;H01L21/28;H01L21/316;H01L29/51;H01L29/94 主分类号 H01L21/02
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