发明名称 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY
摘要 <P>PROBLEM TO BE SOLVED: To enable simultaneous formations of function elements to be laminated and enable reduction in the number of processes and uniformity in the history of heat treatment. <P>SOLUTION: A plurality of first electrodes 54 (54<SB>1</SB>to 54<SB>4</SB>) laminated sandwiching insulating films, and one common second electrode 58 formed opposing each first electrode 54 laminated in a plurality of layers, are provided. Moreover, the functions elements 60, 61 are also formed between the first electrodes 54 of a plurality of layers and the common second electrode 58. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2004152893(A) 申请公布日期 2004.05.27
申请号 JP20020314756 申请日期 2002.10.29
申请人 SONY CORP 发明人 NISHIHARA TOSHIYUKI
分类号 G11C17/00;G11C11/22;G11C17/12;H01L21/8246;H01L27/10;H01L27/105;H01L27/112 主分类号 G11C17/00
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