| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a TiN film by which the uniformity of the film thickness or film quality in a TiN film can be improved. SOLUTION: In the method of forming a TiN film, at first, a first TiN film 5 is formed on the film forming face (silicon oxide) 2 in a substrate 1 by a first film forming gas consisting of gaseous TiCl<SB>4</SB>and gaseous NH<SB>3</SB>controlled so that the the gaseous TiCl<SB>4</SB>lies in a feed rate-determining state. Next, a second TiN film 6 is formed on the first TiN film 5 by a second film forming gas consisting of gaseous TiCl<SB>4</SB>and gaseous NH<SB>3</SB>controlled so that the gaseous TiCl<SB>4</SB>lies in a reaction rate-determining state. Thus, the film thickness or film quality of the first and second TiN films 5 and 6 are made uniform on the whole. COPYRIGHT: (C)2004,JPO
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