发明名称 |
Nitride semiconductor with active layer of quantum well structure with indium-containing nitride semiconductor |
摘要 |
A nitride semiconductor device has a nitride semiconductor layer structure. The structure includes an active layer of a quantum well structure containing an indium-containing nitride semiconductor. A first nitride semiconductor layer having a band gap energy larger than that of the active layer is provided in contact with the active layer. A second nitride semiconductor layer having a band gap energy smaller than that of the first layer is provided over the first layer. Further, a third nitride semiconductor layer having a band gap energy larger than that of the second layer is provided over the second layer.
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申请公布号 |
US2004101012(A1) |
申请公布日期 |
2004.05.27 |
申请号 |
US20030718652 |
申请日期 |
2003.11.24 |
申请人 |
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发明人 |
NAKAMURA SHUJI;NAGAHAMA SHINICHI;IWASA NARUHITO |
分类号 |
H01L33/02;H01L33/06;H01L33/32;H01S5/20;H01S5/343;(IPC1-7):H01L21/00;H01S5/00 |
主分类号 |
H01L33/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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