| 发明名称 |
Method of plasma etching high-K dielectric materials with high selectivity to underlying layers |
| 摘要 |
A method of plasma etching a layer of dielectric material having a dielectric constant that is greater than four (4). The method includes exposing the dielectric material layer to a plasma comprising a hydrocarbon gas and a halogen containing gas. <IMAGE>
|
| 申请公布号 |
EP1422751(A2) |
申请公布日期 |
2004.05.26 |
| 申请号 |
EP20030257189 |
申请日期 |
2003.11.14 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
NALLAN, PADMAPANI C.;JIN, GUANGXIANG;KUMAR, AJAY |
| 分类号 |
H01L21/311;(IPC1-7):H01L21/311 |
主分类号 |
H01L21/311 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
