| 摘要 |
The invention relates to a photolithographic mask for exposing radiosensitive resist layers on semiconductor substrates. Said mask comprises at least one radioparent substrate and at least one radiopaque layer and/or at least one halftone layer. Main structures are provided by means of the radiopaque layer and/or the halftone layer, said main structures being embodied in such a way that the model formed thereby is transmitted into the resist layer during exposure to radiation. Auxiliary structures are provided by means of the radiopaque layer and/or the halftone layer, said auxiliary structures being embodied in such a way that the model formed thereby is not transmitted into the resist layer during exposure to radiation. |
