| 摘要 |
A magnetic sensor which comprises (1) a supporting substrate, (2) a ferromagnetic tunnel junction element which has a first magnetic layer on the supporting substrate, a tunnel insulation layer on the first magnetic layer, the tunnel insulation layer comprising aluminum oxide obtained by oxidizing an aluminum film formed on the first magnetic layer by sputtering using an aluminum target having a purity of 99.999% or more, and a second magnetic layer on the tunnel insulation layer, and (3) a converter element converting a change in a magnetic field to a change in resistance. Alternatively, as the ferromagnetic tunnel junction element of (2), one whose tunnel junction has a voltage-resistance characteristic which is asymmetric in the direction of the applied voltage is used. The asymmetric voltage-resistance characteristic may be obtained by heat treatment of a film of the insulation layer material, changing a partial pressure of oxygen in an atmosphere for the formation of insulation layer of an oxide, use of two or more target material for the formation of film and a moving substrate, and the like.
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