FLASH MEMORY CELL ARRAYS HAVING DUAL CONTROL GATES PER MEMORY CELL CHARGE STORAGE ELEMENT,申请号AU20030279257-传众专利搜索

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发明名称	FLASH MEMORY CELL ARRAYS HAVING DUAL CONTROL GATES PER MEMORY CELL CHARGE STORAGE ELEMENT
摘要
申请公布号	AU2003279257(A1)	申请公布日期	2004.05.25
申请号	AU20030279257	申请日期	2003.10.09
申请人	SANDISK CORPORATION	发明人	ELIYAHOU HARARI
分类号	G11C16/04;H01L21/8247;H01L27/115;(IPC1-7):G11C16/04	主分类号	G11C16/04
代理机构		代理人
主权项
地址

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