| 摘要 |
PURPOSE: A method of forming a multilayer metal line of a semiconductor device is provided to reduce contact resistance and contact failure between metal lines by connecting an upper metal line with a lower metal line using a protrusion made of an anti-reflective coating and a second conductive layer instead of a tungsten layer. CONSTITUTION: A first insulating layer(22), a first conductive layer, an etch stop layer, a second conductive layer(25b), an anti-reflective coating(26b) and a first photoresist pattern are sequentially formed on a substrate(21). The first insulating layer is exposed to the outside by etching selectively the resultant structure using the first photoresist pattern as an etching mask. A protrusion is formed by etching selectively the anti-reflective coating and the second conductive layer using a second photoresist pattern as an etching mask. After the resultant structure is planarized by using an insulating layer, a third conductive layer is electrically connected with the protrusion.
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