发明名称 |
Apparatus for adjusting input capacitance of semiconductor device and fabricating method |
摘要 |
An apparatus for finely adjusting the input capacitance of a semiconductor device and a method of fabricating the apparatus are disclosed. The invention adjusts finely the input capacitance without increasing a layout area of the device by using a capacitor constructed with a poly layer/device isolation layer/P-type substrate. The poly layer is formed on an unnecessary space provided by the device isolation layer under an input pad.
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申请公布号 |
US6741114(B2) |
申请公布日期 |
2004.05.25 |
申请号 |
US20010006566 |
申请日期 |
2001.12.10 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KIM TAEK SEUNG |
分类号 |
H01L27/04;G11C5/00;H01L23/60;H01L23/64;H01L27/02;H04L25/02;(IPC1-7):H03K5/08 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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