HIGHLY INTEGRATED FERROELECTRIC FLOATING GATE RAM CAPABLE OF BEING OPERATED WITH ONE TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A highly integrated FFRAM(Ferroelectric Floating gate Random Access Memory) and a manufacturing method thereof are provided to operate easily the FFRAM by using one transistor and to prevent a semiconductor substrate from reacting on the ferroelectric layer by using a barrier layer. CONSTITUTION: A first conductive pattern(30) is prolonged to a first direction on a semiconductor substrate(10). A second conductive pattern(60) is prolonged to a second direction on the first conductive pattern via a ferroelectric layer(40). The second direction is vertical to the first direction. An active matrix(50) with a source region(54) and a drain region(56) is interposed between the ferroelectric layer and the second conductive layer. A barrier layer(20) is interposed between the substrate and the ferroelectric layer.