| 发明名称 |
Etch process for recessing polysilicon in trench structures |
| 摘要 |
A method for eching a recess in a polysilicon region of a semiconductor device by applying a solution of NH4OH in water to the polysilicon.
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| 申请公布号 |
US6740595(B2) |
申请公布日期 |
2004.05.25 |
| 申请号 |
US20020122996 |
申请日期 |
2002.04.12 |
| 申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
KUDELKA STEPHAN;TEWS HELMUT;MICHAELIS ALEXANDER;SCHROEDER UWE;POPP MARTIN;SCHUPKE KRISTIN;KOEHLER DANIEL |
| 分类号 |
H01L21/302;H01L21/306;H01L21/311;H01L21/334;H01L21/336;H01L21/461;H01L21/8242;H01L27/108;(IPC1-7):H01L21/311 |
主分类号 |
H01L21/302 |
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