Semiconductor memory device capable of performing burn-in test at high speed

摘要

A control circuit generates burn-in test signals and a signal on the basis of an address for causing transition of a semiconductor memory device to a burn-in test mode to output the signals to a predecoder. The predecoder outputs signals for selecting even-numbered word lines and signals for causing odd-numbered word lines to be in a non-selected state on the basis of the burn-in test signals at H level and further outputs signals for causing even-numbered word lines to be in a non-selected state and signals for selecting odd-numbered word lines on the basis of the burn-in test signals at H level. As a result, stresses can be effectively applied by the burn-in test.