发明名称 Micro structure for vertical displacement detection and fabricating method thereof
摘要 Provided are a structure for detecting a vertical displacement and its manufacturing method. The structure for detecting a vertical displacement includes a body, an inertial mass floated over the body, a plurality of support beams extending from the inertial mass so as to suspend the inertial mass over the body, movable electrodes integrally formed with the inertial mass, and fixed electrodes floated over the body, each being positioned between the neighboring movable electrodes, wherein a vertical length of the movable electrode is different from a vertical length of the fixed electrode. Therefore, the structure and the electrodes can be simultaneously manufactured, thereby making the fabrication process simple. Also, it is possible to manufacture a three-axis accelerometer and a three-axis gyroscope on a single wafer by the same process, to be integrated as a six-axis inertial sensor.
申请公布号 US6739189(B2) 申请公布日期 2004.05.25
申请号 US20020121666 申请日期 2002.04.15
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE BYEUNG-LEUL;JUNG KYU-DONG;LEE SANG-WOO;CHO YONG-CHUL
分类号 B81B3/00;B81C1/00;G01C19/56;G01P15/125;G01P15/18;(IPC1-7):G01P15/00;H01L29/84 主分类号 B81B3/00
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