发明名称 Semiconductor device having capacitors provided with protective insulating film
摘要 A semiconductor device includes a first electrode film, first and second electrode films, first and second connection parts, first and second wirings, and a protective insulating film. The second electrode film opposes the first electrode film. The capacitor insulating film is provided between the first electrode film and the second electrode film. The first and second connection parts are electrically connected to the first and second electrode films, respectively. The first wiring is electrically connected to the first electrode film by the first connection part. The second wiring is electrically connected to the second electrode film by the second connection part. The protective insulating film is provided between the capacitor insulating film and the second electrode film or on the second electrode film.
申请公布号 US6740974(B2) 申请公布日期 2004.05.25
申请号 US20020178019 申请日期 2002.06.24
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 YOSHITOMI TAKASHI
分类号 H01L27/04;H01L21/02;H01L21/316;H01L21/822;H01L21/8242;H01L23/522;H01L27/108;(IPC1-7):H01L23/48 主分类号 H01L27/04
代理机构 代理人
主权项
地址