发明名称 |
CRYSTALLINE MULTILAYER STRUCTURE AND MANUFACTURING METHOD THEREOF |
摘要 |
A process for fabricating a multilayer crystalline structure of nitrides of metals from group III of periodic table including GaN, AlN and InN is provided. The process includes the steps of heating a group III metal (26) to a temperature T1 under an equilibrium nitrogen pressure while maintaining group III metal nitride stability to form a first crystal layer of the group III metal nitride. Thereafter the method includes the step of forming a second crystal layer (28) of the group III metal nitride by decreasing the nitrogen pressure such that the second crystal layer grows on the first layer with a growth rate slower than the growth rate of the first layer at a temperature T2 not greater than temperature T1. The second layer (28) grows on at least a portion of the first layer at a pre-determined thickness under the new nitrogen pressure.
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申请公布号 |
CA2168871(C) |
申请公布日期 |
2004.05.25 |
申请号 |
CA19942168871 |
申请日期 |
1994.04.27 |
申请人 |
CENTRUM BADAN WYSOKOCISNIENIOWYCH |
发明人 |
POROWSKI, SYLWESTER;JUN, JAN;GRZEGORY, IZABELLA;KRUKOWSKI, STANISLAW;WROBLEWSKI, MIROSLAW |
分类号 |
C30B29/40;C23C16/18;C30B11/00;C30B11/12;H01L21/20;H01L21/203;H01L21/205;H01L21/208;H01L33/00;H01L33/32;H01S5/00;H01S5/323;(IPC1-7):C30B11/00 |
主分类号 |
C30B29/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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