| 摘要 |
PURPOSE: A semiconductor device and a method for manufacturing the same are provided to reduce junction capacitance between a junction region and a well by surrounding the bottom of the junction region using an L-shaped isolation layer. CONSTITUTION: A first well(11) is formed on a substrate(10). An L-shaped isolation layer(12) of a trench structure is formed in the first well of an isolation region. A second well is filled in the trench of the L-shaped isolation layer. A gate insulating layer(16) and a gate electrode(18) are formed on the substrate of an active region. A shallow junction region(22) is formed in the substrate and surrounded by the L-shaped isolation layer, so that the junction area between the junction region and the first well is reduced.
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