| 摘要 |
An antifuse circuit serves to generate an antifuse enable signal for use in repairing a defected memory cell in a semiconductor device. The inventive antifuse includes: an antifuse unit employing an antifuse, wherein the antifuse is controlled as being shorted or insulated according to a repair program; an antifuse precharge unit for precharging the antifuse by using a predetermined voltage level in response to a power-up signal, wherein the predetermined voltage level is lower than that of an external voltage source; and an output latch unit driven by the predetermined voltage level for latching a antifuse voltage level appearing on the antifuse and generating the antifuse enable signal corresponding to the antifuse voltage level.
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