| 摘要 |
A ridge waveguide distributed feedback laser includes a p-type InGaAsP grating layer having a p-type carrier density ranging from 1.5x10<18 >cm<-3 >to 4.0x10<-3 >cm<-3 >and preferably from 2.0x10<18 >cm<-3 >to 3.0x10<18 >cm<-3>. In combination with such raised levels of p-type carrier density in the InGaAsP grating layer, the p-type carrier density may also be enhanced both in a p-type InP layer between the grating layer and a contact layer, and in another p-type InP layer between the grating layer and a quantum well active layer, the density ranging from 1.5x10<18 >cm<-3 >to 4.0x10<18 >cm<-3 >and preferably from 2.0x10<18 >cm<-3 >to 3.0x10<18 >cm<-3>.
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