发明名称 Crystal growing apparatus
摘要 In a high rate pulling with a cooler 10 surrounding a single crystal 8, steam explosion by leakage from the cooler 10 is prevented. Flow rates La, Lb of cooling water are measured by flowmeters 14a, 14b on a cooling water inflow side and cooling water outflow side of the cooler 10. When flow rate difference DeltaL (La-Lb) determined from the flow rates La, Lb exceeds 20 cc/minute, open/close valves 15a, 15b, 15c are operated to stop water supply to the cooler 10 and drain outward the cooing water in the cooler 10.
申请公布号 US6740160(B2) 申请公布日期 2004.05.25
申请号 US20020105634 申请日期 2002.03.26
申请人 SUMITOMO MITSUBISHI SILICON CORPORATION 发明人 KUBO TAKAYUKI;ASANO HIROSHI;KAWAHIGASHI FUMIO;TSUJINO AKIRA
分类号 C30B15/00;C30B15/14;C30B29/06;H01L21/208;(IPC1-7):C30B35/00 主分类号 C30B15/00
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