FeRAM DEVICE AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A FeRAM device is provided to prevent an oxide preventing layer from being scratched and improve contact reliability of a semiconductor device, by making a storage node contact plug formed of a titanium metal layer such that the oxide preventing layer is covered with the third interlayer dielectric, by making the third interlayer dielectric have the same height as a capacitor and by planarizing the third interlayer dielectric by a predetermined thickness. CONSTITUTION: A semiconductor substrate(100) is prepared. The first and second interlayer dielectric are stacked on the semiconductor substrate. A contact plug(130a) is formed in a predetermined portion inside the second and first interlayer dielectrics. The oxide preventing layer(150) is formed on a predetermined portion of the contact plug and the second interlayer dielectric. The first barrier metal layer is interposed between the oxide preventing layer and the contact plug/the second interlayer dielectric. The third interlayer dielectric(160) of a predetermined height is formed on the oxide preventing layer. A lower electrode(170) is formed in the third interlayer dielectric, contacting the oxide preventing layer. A ferroelectric layer(175) is formed on the lower electrode. An upper electrode(180) is formed on the ferroelectric layer. The contact plug is formed as one body with the barrier metal layer.