METHOD FOR FORMING METAL LINE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a metal line of a semiconductor device is provided to be capable of obtaining an excellent burial characteristic using a low temperature process without a reflow process. CONSTITUTION: An insulating pattern(12) having a recess region is formed on a semiconductor substrate(10). A barrier metal(20) is formed along the upper surface of the resultant structure. A metal plug(30) is formed on the barrier metal for filling the recess region. An Al layer(40) is formed on the entire surface of the resultant structure by carrying out a CVD(Chemical Vapor Deposition) process at the temperature of 90-400 °C. A metal layer(50) is formed on the Al layer by carrying out a PVD(Physical Vapor Deposition) process at the temperature of -20-400 °C. Preferably, a contact hole for exposing a conductive region of the semiconductor substrate is used as the recess region.