STRUCTURE OF CHAMBER IN INDUCTIVE COUPLING PLASMA ETCHING APPARATUS

摘要

PURPOSE: A structure of a chamber in an ICP(inductive coupling plasma) etching apparatus is provided to reduce the occurrence of defects of a semiconductor device and increase thruput by preventing the polymer generated in an etch process of an etch chamber from being unstably accumulated and by easily generating plasma in a plasma chamber. CONSTITUTION: An etch process is performed in the etch chamber(40). Plasma is generated in the plasma chamber(30). The etch chamber is separated from the plasma chamber by a partition part(20). The partition part confronting the etch chamber is formed of a ceramic material. The partition part confronting the plasma chamber is formed of a quartz material.