SHORT CHANNEL MOS TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A short channel MOS(Metal Oxide Semiconductor) transistor and a manufacturing method thereof are provided to be capable of obtaining a nano-meter level channel region. CONSTITUTION: A MOS transistor is provided with a semiconductor substrate(1), an STI(Shallow Trench Isolation) region(19) formed at both sides of the semiconductor substrate, a source/drain region connected with the lateral portion of the STI region, and a plurality of spacers(43) spaced apart from each other for contacting each source/drain region. The MOS transistor further includes a polysilicon layer(42) filled between the spacers for being used as a gate electrode, a gate isolating layer(41) for enclosing the lower portion of the polysilicon layer, and a source/drain expansion region(48) connected with the neighboring source/drain region. At this time, the length of the polysilicon layer is controlled by controlling the interval between spacers.