| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of preventing the deterioration of the degree of integration and increasing a capacitor area. CONSTITUTION: A trench type isolation layer(202) is formed on a semiconductor substrate(201). An etching process is carried out on the resultant structure for exposing the upper sidewall of a trench. A silicon growth layer(204) is selectively formed on the resultant structure. A plurality of stack structures are formed on the resultant structure. At this time, the stack structures are made of oxide layers(206a,206b) and polysilicon layers(207a,207b), respectively. A low concentration ion implantation layer is selectively formed in the silicon growth layer. An insulating spacer(212) is formed at both sidewalls of each polysilicon layer. The high concentration ion implantation layer(213) is selectively formed in the silicon growth layer.
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