| 摘要 |
PURPOSE: A method for removing fine particles of an SOG(Spin On Glass) film is provided to restrain generation of particles due to a high pressure by using a buffering of wafer according to a high pressure processing. CONSTITUTION: After sequentially depositing the first conductive layer and the first interlayer dielectric on a semiconductor substrate, an SOG film having S-H coupling is coated on the resultant structure. After baking the SOG film, the SOG film is firstly rinsed by DI(DeIonized) water. A high pressure processing is then performed to restrain generation of particles. The SOG film is then secondly rinsed by DI water. Then, the SOG film is dried.
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