发明名称 METHOD OF FORMING FILM ON SUBSTRATE
摘要 <p>In a preprocess, in a state in which the positional relation between the space positions of incidence points of laser light (LB) on a test substrate (11) and a target (12) prepared for information collection is fixed, information about the distribution of film thickness on the test substrate with the film deposited according to given irradiation time is obtained in advance while irradiating the target (12) with laser light (LB) or irradiating the target (12) with laser light (LB) while rotating the test substrate. In this process, the deposition time in each relative positional relation is adjusted on the basis of the film thickness distribution information obtained in advance in the preprocess while relatively rotating the incidence points of laser light (LB) on the substrate (11) or the substrate holder (21) and target (12) around a particular rotation axis or relatively spatially moving them, or while simultaneously effecting such relative rotation and relative movement.</p>
申请公布号 WO2004042110(A1) 申请公布日期 2004.05.21
申请号 WO2003JP14188 申请日期 2003.11.07
申请人 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE;SAKAI, SHIGEKI 发明人 SAKAI, SHIGEKI
分类号 C23C14/28;C23C14/54;(IPC1-7):C23C14/28 主分类号 C23C14/28
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