发明名称 |
METHOD OF MAKING A NANOSCALE ELECTRONIC DEVICE |
摘要 |
The present invention relates to a method of making a nanoscale electronic device wherein said device comprises a gap between about 0.1 nm and about 100 nm between at least two conductors, semiconductors or the combination thereof. The method features complete assembly of electrical contacts before addition of a molecular component thereby preserving the integrity of the molecular electronic component and maintaining a well-formed gap. The gap produced is within the nanoscale regime, has uniform width and is further characterized by surfaces that are uniformly smooth. |
申请公布号 |
WO2004041712(A2) |
申请公布日期 |
2004.05.21 |
申请号 |
WO2003US14959 |
申请日期 |
2003.05.13 |
申请人 |
WILLIAM MARSH RICE UNIVERSITY |
发明人 |
PANG, HARRY, F.;TOUR, JAMES, M. |
分类号 |
B82B;H01L21/28;H01L21/336;H01L21/44;H01L21/8238;H01L51/00 |
主分类号 |
B82B |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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